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CGD65A055S2-T07
Part number：
CGD65A055S2-T07
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Cambridge GaN Devices
describe：
650V GAN HEMT, 55MOHM, DFN8X8. W
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
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inventory 2257
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quantity
unit price
price
1
16.57
16.57
10
11.74
117.4
100
10.86
1086
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    16-PowerVDFN
  • Supplier Device Package
    16-DFN (8x8)
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    12V
  • Rds On (Max) @ Id, Vgs
    77mOhm @ 2.2A, 12V
  • Vgs(th) (Max) @ Id
    4.2V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs
    6 nC @ 12 V
  • Vgs (Max)
    +20V, -1V
  • FET Feature
    Current Sensing
  • 11111111
  • 123
  • 1

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