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CGD65A130SH2
Part number：
CGD65A130SH2
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Cambridge GaN Devices
describe：
650V GAN HEMT, 130MOHM, DFN8X8.
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
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inventory 5013
minimum : 1
quantity
unit price
price
1
7.55
7.55
10
5.12
51.2
100
3.89
389
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    16-PowerVDFN
  • Supplier Device Package
    16-DFN (8x8)
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    12A
  • Drive Voltage (Max Rds On, Min Rds On)
    12V
  • Rds On (Max) @ Id, Vgs
    182mOhm @ 900mA, 12V
  • Vgs(th) (Max) @ Id
    4.2V @ 4.2mA
  • Gate Charge (Qg) (Max) @ Vgs
    1.9 nC @ 12 V
  • Vgs (Max)
    +20V, -1V
  • Power Dissipation (Max)
    -
  • FET Feature
    -
  • 11111111
  • 123
  • 1

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