collect compare
CGD65B130S2-T13
Part number：
CGD65B130S2-T13
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Cambridge GaN Devices
describe：
650V GAN HEMT, 130MOHM, DFN5X6.
package：
Cut Tape (CT)
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 6455
minimum : 1
quantity
unit price
price
1
7.23
7.23
10
4.89
48.9
100
3.67
367
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    8-PowerVDFN
  • Supplier Device Package
    8-DFN (5x6)
  • FET Type
    -
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    9V, 20V
  • Rds On (Max) @ Id, Vgs
    182mOhm @ 900mA, 12V
  • Vgs(th) (Max) @ Id
    4.2V @ 4.2mA
  • Gate Charge (Qg) (Max) @ Vgs
    2.3 nC @ 12 V
  • Vgs (Max)
    +20V, -1V
  • FET Feature
    Current Sensing
  • 11111111
  • 123
  • 1

{{ boxName }} ({{ dataList?.length || 0 }} Items)

{{ val.part_number }}

{{ val.manufacturer || val.en_manufacturer || '' }}

quantity: {{ val.quantity }}

submit

it was empty.