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FF06100G
Part number：
FF06100G
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
fastSiC
describe：
SICFET N-CH 650V 20.6A PDFN8x8
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
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inventory 1804
minimum : 1
quantity
unit price
price
1
8.17
8.17
10
2.99
29.9
100
2.79
279
3000
2.72
8160
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    4-PowerTSFN
  • Supplier Device Package
    4-PDFN (8x8)
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    20.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    18V
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 10A, 18V
  • Vgs(th) (Max) @ Id
    2.2V @ 14mA
  • Gate Charge (Qg) (Max) @ Vgs
    43 nC @ 15 V
  • Vgs (Max)
    18V
  • Input Capacitance (Ciss) (Max) @ Vds
    1000 pF @ 400 V
  • Power Dissipation (Max)
    83W (Tc)
  • FET Feature
    -
  • 11111111
  • 123
  • 1

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