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FL06100G
Part number:
FL06100G
manufacturer:
describe:
SICFET N-CH 650V 22A PDFN8x8
package:
Tape & Reel (TR)
ROHS status:
Yes
currency:
USD
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inventory 1900
minimum : 1
quantity
unit price
price
1
8.17
8.17
10
2.99
29.9
100
2.79
279
3000
2.72
8160
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    4-PowerTSFN
  • Supplier Device Package
    4-PDFN (8x8)
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    100mOhm @ 10A, 15V
  • Vgs(th) (Max) @ Id
    1.5V @ 14mA
  • Gate Charge (Qg) (Max) @ Vgs
    51 nC @ 12 V
  • Vgs (Max)
    15V
  • Input Capacitance (Ciss) (Max) @ Vds
    1129 pF @ 400 V
  • Power Dissipation (Max)
    83W (Tc)
  • FET Feature
    -