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specifications
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Part Status
Active
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Grade
-
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Qualification
-
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Mounting Type
Surface Mount
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Operating Temperature
-55°C ~ 175°C (TJ)
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Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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Supplier Device Package
TO-252
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FET Type
N-Channel
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Technology
SiCFET (Silicon Carbide)
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Drain to Source Voltage (Vdss)
650 V
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Current - Continuous Drain (Id) @ 25°C
15A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
15V
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Rds On (Max) @ Id, Vgs
150mOhm @ 5A, 15V
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Vgs(th) (Max) @ Id
2V @ 8mA
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Gate Charge (Qg) (Max) @ Vgs
29.5 nC @ 12 V
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Vgs (Max)
15V
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Input Capacitance (Ciss) (Max) @ Vds
672 pF @ 400 V
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Power Dissipation (Max)
68W (Tc)
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FET Feature
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