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FL06250G
Part number：
FL06250G
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
fastSiC
describe：
SICFET N-CH 650V 10.7A PDFN8x8
package：
Tape & Reel (TR)
ROHS status：
Yes
currency：
USD
BUY NOW add to cart
inventory 1900
minimum : 1
quantity
unit price
price
1
3.81
3.81
10
1.4
14
100
1.3
130
3000
1.27
3810
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Package / Case
    4-PowerTSFN
  • Supplier Device Package
    4-PDFN (8x8)
  • FET Type
    N-Channel
  • Technology
    SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    10.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    15V
  • Rds On (Max) @ Id, Vgs
    330mOhm @ 3A, 15V
  • Vgs(th) (Max) @ Id
    2V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs
    18.2 nC @ 12 V
  • Vgs (Max)
    15V
  • Input Capacitance (Ciss) (Max) @ Vds
    436 pF @ 400 V
  • Power Dissipation (Max)
    46.8W (Tc)
  • FET Feature
    -
  • 11111111
  • 123
  • 1

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