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specifications
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Part Status
Active
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Grade
-
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Qualification
-
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Mounting Type
Through Hole
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Operating Temperature
-55°C ~ 175°C (TJ)
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Package / Case
TO-247-4
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Supplier Device Package
TO-247-4
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FET Type
N-Channel
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Technology
SiCFET (Silicon Carbide)
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Drain to Source Voltage (Vdss)
1200 V
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Current - Continuous Drain (Id) @ 25°C
41A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
15V
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Rds On (Max) @ Id, Vgs
90mOhm @ 20A, 15V
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Vgs(th) (Max) @ Id
2.69V @ 7.5mA
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Gate Charge (Qg) (Max) @ Vgs
54 nC @ 15 V
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Vgs (Max)
+22V, -10V
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Input Capacitance (Ciss) (Max) @ Vds
1560 pF @ 800 V
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Power Dissipation (Max)
207W (Tc)
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FET Feature
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