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IRFD210
Part number：
IRFD210
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Vishay Siliconix
describe：
MOSFET N-CH 200V 600MA 4DIP
package：
Tube
ROHS status：
Yes
currency：
USD
PDF:
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inventory 1600
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specifications
  • Part Status
    Obsolete
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Package / Case
    4-DIP (0.300", 7.62mm)
  • Supplier Device Package
    4-HVMDIP
  • FET Type
    N-Channel
  • Technology
    MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss)
    200 V
  • Current - Continuous Drain (Id) @ 25°C
    600mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    1.5Ohm @ 360mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs
    8.2 nC @ 10 V
  • Vgs (Max)
    ±20V
  • Input Capacitance (Ciss) (Max) @ Vds
    140 pF @ 25 V
  • Power Dissipation (Max)
    1W (Ta)
  • FET Feature
    -
  • 11111111
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