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TPH3208PD
Part number：
TPH3208PD
CLASSIFICATION：
Discrete Semiconductor Products
manufacturer：
Transphorm
describe：
GANFET N-CH 650V 20A TO220AB
package：
Tube
ROHS status：
Yes
currency：
USD
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inventory 1600
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specifications
  • Part Status
    Obsolete
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Through Hole
  • Operating Temperature
    -55°C ~ 150°C
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    650 V
  • Current - Continuous Drain (Id) @ 25°C
    20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Rds On (Max) @ Id, Vgs
    130mOhm @ 13A, 8V
  • Vgs(th) (Max) @ Id
    2.6V @ 300µA
  • Gate Charge (Qg) (Max) @ Vgs
    14 nC @ 8 V
  • Vgs (Max)
    ±18V
  • Input Capacitance (Ciss) (Max) @ Vds
    760 pF @ 400 V
  • Power Dissipation (Max)
    96W (Tc)
  • FET Feature
    -
  • 11111111
  • 123
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