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WI71100TR
Part number:
WI71100TR
manufacturer:
describe:
POWER GAN IC DISCRETE 8X8 PDFN
package:
Cut Tape (CT)
ROHS status:
Yes
currency:
USD
PDF:
BUY NOW add to cart
inventory 4094
minimum : 1
quantity
unit price
price
1
5.99
5.99
10
4.59
45.9
25
4.24
106
100
3.86
386
250
3.67
917.5
500
3.56
1780
1000
3.47
3470
specifications
  • Part Status
    Active
  • Grade
    -
  • Qualification
    -
  • Mounting Type
    Surface Mount
  • Operating Temperature
    -40°C ~ 150°C (TJ)
  • Package / Case
    8-LDFN Exposed Pad
  • Supplier Device Package
    8-PDFN (8x8)
  • FET Type
    N-Channel
  • Technology
    GaNFET (Gallium Nitride)
  • Drain to Source Voltage (Vdss)
    700 V
  • Current - Continuous Drain (Id) @ 25°C
    17A (Tj)
  • Drive Voltage (Max Rds On, Min Rds On)
    6V
  • Rds On (Max) @ Id, Vgs
    120mOhm @ 2A, 6V
  • Vgs(th) (Max) @ Id
    1.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs
    4.8 nC @ 6 V
  • Vgs (Max)
    +6V, -4V
  • Input Capacitance (Ciss) (Max) @ Vds
    120 pF @ 400 V
  • Power Dissipation (Max)
    -
  • FET Feature
    -